BCSK-SZ250 50W GAN Chip RF Digital Power Amplifier Module 120-200MHz with Circulator High-Linearity Wideband Amplifier

BCSK-SZ250 Type 50W GAN Chip RF Digital Power Amplifier Module 120-200MHz High-Linearity Wideband Amplifier with Circulator

The BCSK-SZ250 is an industrial-grade 50W RF digital power amplifier module launched by Bochuang Spacetime, designed for 120-200MHz low-frequency applications. It delivers 50W continuous wave output power with exceptional signal fidelity. Built on third-generation Gallium Nitride (GaN) technology, this module offers higher power density, lower distortion, and superior thermal stability compared to traditional LDMOS devices. Ideal for drone countermeasures systems, electronic warfare equipment, spectrum monitoring stations, and industrial RF test platforms. Operating at DC28V with a typical current of 2.5A, it supports wide-temperature ranges and features an aluminum alloy shielded enclosure to effectively suppress electromagnetic interference. Equipped with standard female SMA connectors for easy system integration, its compact design makes it perfect for embedded deployments in space-constrained environments, serving as the core power unit for high-performance RF frontends.

¥1,800¥2,100

In Stock (500units

BCSK-SZ250 50W GAN Chip RF Digital Power Amplifier Module 120-200MHz with Circulator High-Linearity Wideband AmplifierBCSK-SZ250 50W GAN Chip RF Digital Power Amplifier Module 120-200MHz with Circulator High-Linearity Wideband AmplifierBCSK-SZ250 50W GAN Chip RF Digital Power Amplifier Module 120-200MHz with Circulator High-Linearity Wideband AmplifierBCSK-SZ250 50W GAN Chip RF Digital Power Amplifier Module 120-200MHz with Circulator High-Linearity Wideband AmplifierBCSK-SZ250 50W GAN Chip RF Digital Power Amplifier Module 120-200MHz with Circulator High-Linearity Wideband AmplifierBCSK-SZ250 50W GAN Chip RF Digital Power Amplifier Module 120-200MHz with Circulator High-Linearity Wideband Amplifier

Product Overview

BCSK-SZ250is a solution designed specifically for120-200 MHz Low BandIndustrial-grade design50WRF Digital Power Amplifier Module, by Bochuang

Spacetime) developed and manufactured. This module utilizes third-generation semiconductor gallium nitride (GaN) technology, featuring50W Continuous Wave Output PowerWith superior signal fidelity,

Suitable forDrone Countermeasure SystemElectronic Countermeasure EquipmentSpectrum monitoring stations and industrial RF test platforms. Its operating voltage isDC 28V, typical current 2.5A, supports wide

Operates in a warm state; the enclosure features an aluminum alloy shielding structure to effectively suppress electromagnetic interference. The module interface uses a standard N-type female connector for easy system integration. This compact design is suitable for...

A core power unit for high-performance RF front-ends, designed for space-constrained embedded deployments.


Performance Features

  • High linearity, low distortionUses an optimized bias circuit and matching network. Third-order intercept point (IP3) exceeds +35 dBm, meeting the requirements of high dynamic range communication systems.

  • Precise Frequency Coverage: Deeply optimize mainstream communication bands from 120 to 200 MHz, compatible with DCS/PHS/GPRS systems and designed for multi-mode deployment scenarios.

  • Low power, high efficiencyAt 50W output, the current is only 2.5A and power-added efficiency (PAE) exceeds 55%, significantly reducing thermal management burden.

  • Smart Security ProtectionBuilt-in protection against overcurrent, overheating, and high VSWR to prevent device damage from load mismatch or transient faults.

  • Industrial-grade environmental adaptabilityAluminum alloy housingIntegrated heat dissipation fins support wide-temperature operation from -20°C to +60°C, designed for harsh industrial environments.


Technical Specifications

Parameter Item

Specifications

Product Model

BCSK-SZ250

Operating Frequency Band

120–200 MHz

Output Power

50W (Continuous Wave CW)

Supply Voltage

DC 28V

Operating Current

2.5A (typical)

RF interface

NConnector(Female)

Protection Mechanism

Overcurrent, Overtemperature, and VSWR Protection

Casing Material

Aluminum Alloy

Operating Temperature

-20°C ~ +60°C

Size

156 × 54 × 22 mm


Customer FAQ

Q1: Does this module support pulse operation mode?

This module is designed for continuous wave (CW) operation. For pulsed applications, use an external modulator and ensure the duty cycle does not exceed 30% to prevent overheating.

Q2: Is an external heatsink required?

A: The module features an integrated high-efficiency cooling structure. However, in enclosed chassis or under prolonged use conditions, an additional cooler is recommended.Forced Air CoolingorSerrated Heat SinkTo improve long-term stability.

Q3: Can it be used in unlicensed bands?

A: This product is intended solely for authorized industrial, research, or security applications. Users must comply with local radio regulations and must not use it to cause illegal interference or for unauthorized purposes.

Signal transmission of power.

Q4: Do you offer OEM/ODM customization services?

Customize frequency bands, power levels, interfaces, and enclosure structures. Contact our sales team for MOQ details and lead times.

Q5: What is the MTBF (Mean Time Between Failures) of the module?

Under rated conditions, MTBF ≥ 50,000 hours, meeting industrial-grade reliability standards for continuous operation in 7×24 hour scenarios.



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Our technical team is ready to provide detailed specifications and customization options.

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